? 2006 ixys corporation all rights reserved ds99709 (11/06) symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c; r gs = 1 m 100 v v gsm transient 30 v i d25 t c = 25 c 160 a i lrms lead current limit, rms 120 a i dm t c = 25 c, pulse width limited by t jm 430 a i ar t c = 25 c25a e as t c = 25 c 500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 5 p d t c = 25 c 430 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c weight 3g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 1 ma 2.5 4.5 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1 5.8 7.0 m trenchmv tm power mosfet preliminary technical information n-channel enhancement mode avalanche rated IXTA160N10T7 v dss = 100 v i d25 = 160 a r ds(on) 7.0 m to-263 (7-lead) (ixta..7) pin-out:1 - gate 2, 3 - source 4 - nc (cut) 5,6,7 - source tab (8) - drain 1 7 (tab) features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - 42v power bus - abs systems dc/dc converters and off-line ups primary switch for 24v and 48v systems distributed power architechtures and vrms electronic valve train systems high current switching applications high voltage synchronous recifier
ixys reserves the right to change limits, test conditions, and dimensions. IXTA160N10T7 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 65 102 s c iss 6600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 880 pf c rss 135 pf t d(on) resistive switching times 33 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 61 ns t d(off) r g = 5 (external) 49 ns t f 42 ns q g(on) 132 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 37 nc q gd 40 nc r thjc 0.35 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 160 a i sm pulse width limited by t jm 430 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s 100 ns v r = 50 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %. pins: 1 - gate 2, 3 - source 4 - drain 5,6,7 - source tab (8) - drain to-263 (7-lead) (ixta...7) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537
? 2006 ixys corporation all rights reserved IXTA160N10T7 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1 1.2 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 275 300 012345678 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 160a value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 160a i d = 80a fig. 5. r ds(on) normalized to i d = 80a value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 0 50 100 150 200 250 300 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 (7-lead) external lead current limit for to-3p, to-220, & to-263
ixys reserves the right to change limits, test conditions, and dimensions. IXTA160N10T7 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.5 4 4.5 5 5.5 6 6.5 7 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 q g - nanocoulombs v gs - volts v ds = 50v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved IXTA160N10T7 ixys ref: t_160n10t (5v) 11-16-06-a.xls fig. 14. resistive turn-on rise time vs. drain current 30 35 40 45 50 55 60 65 70 25 30 35 40 45 50 i d - amperes t r - nanoseconds r g = 5 v gs = 10v v ds = 50v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 30 50 70 90 110 130 150 170 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds 30 35 40 45 50 55 60 65 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 30 35 40 45 50 55 60 65 70 75 80 85 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 60 65 70 75 80 85 90 95 100 105 110 115 120 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 50v i d = 50a i d = 50a i d = 25a i d = 25a fig. 17. resistive turn-off switching times vs. drain current 38 39 40 41 42 43 44 25 30 35 40 45 50 i d - amperes t f - nanoseconds 44 47 50 53 56 59 62 65 68 71 74 77 80 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 50v t j = 125oc t j = 25oc t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 30 40 50 60 70 80 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 30 40 50 60 70 80 90 100 110 120 130 140 4 6 8 101214161820 r g - ohms t f - nanoseconds 40 55 70 85 100 115 130 145 160 175 190 205 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 25a i d = 50a
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